L/S-Band 140-W Push-Pull Power AlGaAs/GaAs HFET's for Digital Cellular Base Stations

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 9, 1999, Pages 1181-1187

  Takenaka, I ^a,b,c   Ishikura, K ^a,c   Takahashi, H ^a,c   Asano, K ^a,c   Morikawa, J ^a,b,c   Satou, K ^a,d   Kishi, K ^a,d   Hasegawa, K ^a   Tokunaga, K ^a,e   Emori, F ^a,e,f   Kuzuhara, M ^a,g,h  

^a NEC CORPORATION   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c ULSI Device Devmt Laboratories   (Japan)

^d YAMAGATA UNIVERSITY   (Japan)

^e ULSI Device Devmt Laboratories ^*  (Japan)

^f CHIBA INSTITUTE OF TECHNOLOGY   (Japan)

^g KYOTO UNIVERSITY   (Japan)

^h Kansai Electronics Research Lab   (Japan)

Author keywords

Digital cellular base station; Heterostructure field effect transistor (HFET); Microstrip balun; Push pull amplifier

Indexed keywords

EID: 0001699066     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.782074     Document Type: Article

References (8)

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