Kink effect in an InAs-inserted-channel InAlAs/InGaAs inverted HEMT at low temperature

IEEE Electron Device Letters

Volumn 17, Issue 7, 1996, Pages 378-380

  Akazaki, Tatsushi ^b   Takayanagi, Hideaki ^b   Enoki, Takatomo ^a,b  

^a IEEE

^b NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL LATTICES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; EPITAXIAL GROWTH; GATES (TRANSISTOR); HETEROJUNCTIONS; IONIZATION OF SOLIDS; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

DRAIN CURRENT; DRAIN VOLTAGES; IMPACT IONIZATION; INDIUM ALUMINUM ARSENIDE INDIUM GALLIUM ARSENIDE; INDIUM ARSENIDE INSERTED CHANNEL; KINK EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030183009     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.506373     Document Type: Article

References (11)

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