0.15 μm T-shaped gate fabrication for GaAs MODFET using phase shift lithography

IEEE Transactions on Electron Devices

Volumn 43, Issue 2, 1996, Pages 238-244

  Takenaka, Hiroshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; FREQUENCIES; GATES (TRANSISTOR); LIGHT INTERFERENCE; LITHOGRAPHY; MASKS; NUMERICAL METHODS; PHASE SHIFT; PHOTORESISTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

MODULATION DOPED FIELD EFFECT TRANSISTOR; PHASE SHIFT LITHOGRAPHY; SUB QUARTER MICRON FOOTPRINTS; T SHAPED GATE FABRICATION;

FIELD EFFECT TRANSISTORS;

EID: 0030083772     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481723     Document Type: Article

References (10)

1. H. Fukui, "Optimal noise figure of microwave GaAs MESFET's," IEEE Trans. Electron Devices, vol. F,D-2fi, pp. 1032-1037, 1979.
2. H. Takenaka, H. Watanabe, Y. Todokoro, and M. Inoue, "A DUVdefmed-negative resist/EB-defined-positive resist two-layer resist system for the fabrication of T-shaped gate," Jpn. J. Appl. Phvs., Part I. vol. 29, pp. 2879-2883, 1991.
3. Y. Todokoro, "Double-layer resist films for submicrometer electronbeam lithography," IEEE Trans. Electron Devices, vol. ED-27, pp. 1443-1448, 1980.
4. P. C. Chao, P. M. Smith, S. Wanuga, J. C. M. Hwang, W. H. Perkins, R. Tiberio, and E,. D. Wolf, "Electron-beam fabrication of quarter-micron T-shaped-gate FET's using a new tri-layer resist system," 1EDM Tech. Digest, IEEE, New York, pp. 613-616, 1983.
5. H. Jimbo and Y. Yamashita, "0.2 /m or less i-line lithography by phaseshifting-mask technology," IEDM Tech. Digest, IEEE, New York, pp. 825-828, 1990.
6. H. Watanabe, H. Takenaka, Y. Todokoro, and M. Inoue, "Sub-quartermicron gate fabrication using a transparent phase shifting mask," J. Vac. . Sci. Tech. B, vol. 9, pp. 3172-3175, 1991.
7. H. Jimbo, Y. Yamashita, A. Endo, S. Nishibu, H. Uehara, and T.Asano, ' "Sub-half-micron i-line lithography by use of LMR-UV resist," Jpn. J. : Appl. Phys., Part I, vol. 28, pp. 2053-2057, 1989.
8. T. Matsuo, K. Hashimoto, Y. Hirai, and N. Nomura, "Optimization in chemically amplified resist," in Prnc. Annual Meet. Jpn. Soc. Appl. Phys., Spring, 1991, no. 2, p. 553.
9. H. Yamaguchi, O. Suga, F. Murai, and S. Ukazaki, "Evaluation of chemical amplification type negative EB resist (II)," in Proc. Annual Meet. Jpn. Soc. Appl. Phys., Spring, 1990, no. 2, p. 450.
10. A. Brans, H. Luethje, F. A. Vollenbroek, and E. J. Spiertz, "A study of catalitically transformed negative X-ray resists, based on aqueous base developable resin, an acid generator and a crosslinker," Microelect. Eng., vol. 6, pp. 467-471, 1987.