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Volumn 41, Issue 7, 2001, Pages 951-957

Direct tunnelling models for circuit simulation

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED NETWORK ANALYSIS; COMPUTER SIMULATION; ELECTRIC NETWORK SYNTHESIS; INTEGRATED CIRCUIT LAYOUT; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS;

EID: 0035394739     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00047-6     Document Type: Article
Times cited : (2)

References (33)
  • 2
    • 8644285647 scopus 로고    scopus 로고
    • The relentless march of the MOSFET gate oxide thickness to zero
    • (2000) Microelectron Reliab , vol.40 , Issue.4-5 , pp. 557-562
    • Timp, G.1
  • 3
    • 85017833165 scopus 로고    scopus 로고
    • SIA Roadmap/home.html
  • 5
    • 9144258943 scopus 로고
    • Generalized formula for the electric tunnel effect between similar electrodes separated by a thin insulating film
    • (1963) J Appl Phys , vol.34 , Issue.6 , pp. 1793-1803
    • Simmons, J.G.1
  • 17
    • 85017800202 scopus 로고    scopus 로고
  • 18
    • 85017827430 scopus 로고    scopus 로고
  • 31
    • 34547827353 scopus 로고
    • Properties of semiconductor surface inversion layers in the electric quantum limit
    • (1967) Phys Rev , vol.163 , Issue.3 , pp. 817-835
    • Stern, F.1    Howard, W.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.