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Volumn 14, Issue 7, 1999, Pages 628-631
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Gate quality of ex situ deposited Al/SiNx:H/n-In0.53Ga0.47As devices after rapid thermal annealing
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Author keywords
[No Author keywords available]
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Indexed keywords
CAPACITANCE MEASUREMENT;
CRYSTAL LATTICES;
CURRENT VOLTAGE CHARACTERISTICS;
DEPOSITION;
ELECTROMAGNETIC DISPERSION;
ELECTRON CYCLOTRON RESONANCE;
RAPID THERMAL ANNEALING;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING FILMS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR PLASMAS;
CAPACITANCE-VOLTAGE HIGH-LOW FREQUENCY METHODS;
ELECTRON CYCLOTRON RESONANCE PLASMA METHODS;
MISFET DEVICES;
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EID: 0033153967
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/14/7/307 Document Type: Article |
Times cited : (3)
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References (18)
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