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Volumn 14, Issue 7, 1999, Pages 628-631

Gate quality of ex situ deposited Al/SiNx:H/n-In0.53Ga0.47As devices after rapid thermal annealing

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CRYSTAL LATTICES; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTROMAGNETIC DISPERSION; ELECTRON CYCLOTRON RESONANCE; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR PLASMAS;

EID: 0033153967     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/7/307     Document Type: Article
Times cited : (3)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.