Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication

Journal of Materials Science: Materials in Electronics

Volumn 10, Issue 5, 1999, Pages 373-377

  Duenas S ^a   Pelaez R ^a   Castan E ^a   Pinacho, R ^a   Quintanilla, L ^a   Barbolla, J ^a   Martil I ^b   Redondo, E ^b   Gonzalez Diaz G ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; MIS DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE;

INTERFACIAL STATE DENSITY;

ELECTRIC INSULATING MATERIALS;

EID: 0342748551     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1008949507676     Document Type: Article

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