The influences of AlxGa1-xN layer on the characteristics of UV LED structure

Journal of Crystal Growth

Volumn 226, Issue 2-3, 2001, Pages 215-222

  Lee, Cheul Ro ^a   Son, Sung Jin ^a   Seol, Kyeong Won ^a   Yeon, Jeong Mo ^a   Ahn, Haeng Keun ^a   Park, Yong Jo ^b  

^a Chonbuk National University   (South Korea)

^b Nitride Semicon Laboratory   (South Korea)

Author keywords

A1. Characterization; A3. Metal organic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds; B3. Light emitting diodes

Indexed keywords

CRYSTAL LATTICES; CURRENT VOLTAGE CHARACTERISTICS; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; ULTRAVIOLET RADIATION; X RAY DIFFRACTION ANALYSIS;

DISLOCATION DENSITY; LATTICE MISMATCH;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035367755     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01386-0     Document Type: Article

References (22)