Ultrathin gate oxide CMOS with nondoped selective epitaxial Si channel layer

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1136-1144

  Momose, H S ^a   Ohguro, T ^a   Morifuji, E ^a   Sugaya, H ^a   Nakamura, S I ^a   Iwai, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Channel profile; Direct tunneling; Epitaxial silicon growth; Gate leakage current; Gate oxide; Metal gate

Indexed keywords

ELECTRON TUNNELING; EPITAXIAL GROWTH; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SILICA; TRANSCONDUCTANCE;

DIRECT-TUNNELING REGIMES;

CMOS INTEGRATED CIRCUITS;

EID: 0035366261     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925239     Document Type: Article

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