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Volumn , Issue , 1999, Pages 445-448
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Consistent model for time dependent dielectric breakdown in ultrathin silicon dioxides
a
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
GATES (TRANSISTOR);
LEAKAGE CURRENTS;
MATHEMATICAL MODELS;
MOSFET DEVICES;
SILICA;
ULTRATHIN FILMS;
ANODE HOLE INJECTION MODEL;
CONSTANT VOLTAGE STRESSING;
DOMINANT CARRIER CHANGE MODEL;
STRESS INDUCED LEAKAGE CURRENT;
STRESS VOLTAGE DEPENDENCE;
THERMOCHEMICAL MODEL;
TIME DEPENDENT DIELECTRIC BREAKDOWN;
ELECTRIC BREAKDOWN;
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EID: 0033325341
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (30)
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References (19)
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