High-performance double-layer epitaxial-channel PMOSFET compatible with a single gate CMOSFET

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1996, Pages 36-37

  Matsuhashi, H ^a   Ochiai, T ^a   Kasai, M ^a   Nakamura, T ^a   Nishikawa, S ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; GATES (TRANSISTOR); ION IMPLANTATION; OSCILLATORS (ELECTRONIC); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

CMOS RING OSCILLATOR; GATE OXIDE; SHORT CHANNEL EFFECT; ULTRAHIGH VACUUM;

MOSFET DEVICES;

EID: 0029707035     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)