Low-resistance Ni/Au ohmic contact to Mg-doped of Al0.15Ga0.85N/GaN superlattices

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 717-720

  Kuo, C H ^a   Sheu, J K ^a   Chi, G C ^a   Huang, Y L ^a   Yeh, T W ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

AlGaN GaN superlattices; Mg doped GaN; Ohmic contact; p GaN

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; GALLIUM NITRIDE; GOLD; HOLE MOBILITY; MAGNESIUM PRINTING PLATES; NICKEL; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY;

STRAIN INDUCED PIEZOELECTRIC FIELDS;

SEMICONDUCTOR SUPERLATTICES;

EID: 0035335001     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00086-7     Document Type: Article

References (30)