Ohmic contact formation to doped GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 861-866

  Smith, L L ^a   Bremser, M D ^a   Carlson, E P ^a   Weeks Jr , T W ^a   Huang, Y ^a   Kim, M J ^a   Carpenter, R W ^a   Davis, R F ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; EVAPORATION; INTERFACES (MATERIALS); METALLURGY; METALS; NITRIDES; OHMIC CONTACTS; SEMICONDUCTOR DOPING; STRUCTURE (COMPOSITION);

CROSS SECTIONAL TEM; ELECTRON BEAM EVAPORATION; HIGH RESOLUTION EELS; THERMAL EVAPORATION; TRANSMISSION LINE MEASUREMENTS; WORK FUNCTION DIFFERENCES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0029748165     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)