Stability and interface abruptness of InxGa1-xN/InyGa1-yN multiple quantum well structures grown by OMVPE

Journal of Electronic Materials

Volumn 26, Issue 10, 1997, Pages 1109-1113

  Ramer, J C ^a   Zubia, D ^a   Liu, G ^a   Hersee, S D ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

Grazing incidence x ray reflectivity (GIXR); InGaN quantum wells; Metalorganic chemical vapor deposition (MOCVD); X ray diffraction (XRD)

Indexed keywords

HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

GRAZING INCIDENCE X RAY REFLECTIVITY (GIXR); INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031256958     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0003-1     Document Type: Article

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