Characterization of InGaN/GaN multiple quantum well structures. Application to LEDs

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 103-107

  Huet, F ^a   Di Forte Poisson, M A ^a   Romann, A ^a   Tordjman, M ^a   Di Persio, J ^b  

^a THALES   (France)

^b UNIV LILLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROLUMINESCENCE; HETEROJUNCTIONS; HIGH RESOLUTION ELECTRON MICROSCOPY; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; INDIUM GALLIUM NITRIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0033221924     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<103::AID-PSSA103>3.0.CO;2-H     Document Type: Article

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