Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1728-1732

  Tsang, Jian Shihn ^a   Guo, Jan Dar ^a   Chan, Shih Hsiung ^a   Feng, Ming Shiann ^b   Chang, Chun Yen ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Auger electron spectra; GaN InGaN; Photoluminescence; Raman spectra

Indexed keywords

EID: 0004490312     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1728     Document Type: Article

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