Formation of three-dimensional Si islands on Si(111) with a scanning tunneling microscope

Applied Physics Letters

Volumn 74, Issue 15, 1999, Pages 2140-2142

  Shklyaev, Alexander A ^a,b   Shibata, Motoshi ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; CRYSTAL ORIENTATION; EVAPORATION; SCANNING TUNNELING MICROSCOPY; SILICON WAFERS;

ADATOMS;

SEMICONDUCTOR GROWTH;

EID: 0032620592     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123781     Document Type: Article

References (12)

1. J. A. Stroscio and D. M. Eigler, Science 254, 1319 (1991).
2. Ph. Avouris, Acc. Chem. Res. 28, 95 (1995).
3. I.-W. Lyo and Ph. Avouris, Science 253, 173 (1991).
4. C. T. Sailing and M. G. Lagally, Science 265, 502 (1994).
5. H. Uchida, D. Huang, F. Grey, and M. Aono, Phys. Rev. Lett. 70, 2040 (1993).
6. A. Kobayashi, F. Grey, R. S. Williams, and M. Aono, Science 259, 1724 (1993).
7. T. T. Tsong, Phys. Rev. B 44, 13703 (1991).
8. A. Ichimiya, Y. Tanaka, and K. Hayashi, Surf. Rev. Lett. 5, 821 (1998).
9. S. Maruno, H. Nakahara, S. Fujita, H. Watanabe, Y. Kusumi, and M. Ichikawa, Rev. Sci. Instrum. 68, 116 (1997).
10. B. Voigtländer and A. Zinner, Appl. Phys. Lett. 63, 3055 (1993).
11. A. A. Shklyaev, M. Shibata, and M. Ichikawa, Surf. Sci. 416, 192 (1998).
12. K. Takayanagi, Y. Tanishiro, S. Takahashi, and M. Takahashi, Surf. Sci. 164, 367 (1985).