Scanning tunneling spectroscopy of dangling-bond wires fabricated on the Si(100)-2×1-H surface

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 3 B, 1997, Pages

  Hitosugi, Taro ^a   Hashizume, Tomihiro ^a   Heike, Seiji ^a   Watanabe, Satoshi ^a   Wada, Yasuo ^a   Hasegawa, Tetsuya ^a   Kitazawa, Koichi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; ENERGY GAP; FERMI LEVEL; HYDROGEN BONDS; NUMERICAL METHODS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; WIRE;

ATOMIC WIRE; DANGLING BOND WIRES; SEMICONDUCTIVE BAND GAP;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0031101621     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.l361     Document Type: Article

References (17)