Effect of tunneling current on the growth of silicon islands on Si(111) surfaces with a scanning tunneling microscope

Surface Science

Volumn 447, Issue 1, 2000, Pages 149-155

  Shklyaev, Alexander A ^a   Shibata, Motoshi ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

TUNNELING CURRENT;

SEMICONDUCTING SILICON;

EID: 0033899670     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)01165-6     Document Type: Article

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