Continuous transfer of Ge by the tip of a scanning tunneling microscope for formation of lines

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 103-106

  Shklyaev, Alexander A ^a,b   Shibata, Motoshi ^a   Ichikawa, Masakazu ^a  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIFFUSION; ELECTRON DIFFRACTION; GERMANIUM; RAPID THERMAL ANNEALING; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; WETTING;

SCANNING REFLECTION ELECTRON MICROSCOPE (SREM);

NANOSTRUCTURED MATERIALS;

EID: 0035085311     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1330263     Document Type: Article

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