Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1465-1471

  Hokazono, A ^a   Tsugawa, K ^a,b   Umezana, H ^a,b   Kitatani, K ^a   Kawarada, H ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; HYDROGEN; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE STRUCTURE; SYNTHETIC DIAMONDS; THERMODYNAMIC STABILITY; TRANSCONDUCTANCE;

HYDROGEN TERMINATED DIAMONDS; SCHOTTKY BARRIER HEIGHTS; SURFACE P-CHANNEL;

MOSFET DEVICES;

EID: 0033176776     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00090-8     Document Type: Article

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