Improved correlation measurements using voltage and transimpedance amplifiers in low-frequency noise characterization of bipolar transistors

IEEE Transactions on Electron Devices

Volumn 47, Issue 9, 2000, Pages 1772-1773

  Bruce, S ^a,b   Vandamme, L K J ^a,b   Rydberg, A ^a,b  

^a UPPSALA UNIVERSITY   (Sweden)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CORRELATION METHODS; CURRENT DENSITY; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; SPURIOUS SIGNAL NOISE;

AMPLIFIER NOISE; SILICON GERMANIUM; TRANSIMPEDANCE AMPLIFIER; VOLTAGE AMPLIFIER;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0034275434     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.861592     Document Type: Article

References (2)

1. S. Bruce, L. K. J. Vandamme, and A. Rydberg, "Measurement of lowfrequency base and collector current noise and coherence in SiGe heterojunction bipolar transistors using transimpedance amplifiers," IEEE Trans. Electron Devices, vol. 46, pp. 993-1000, May 1999.
2. J. Briaire and L. K. J. Vandamme, "Uncertainty in gaussian noise generalized for cross-correlation spectra," J. Appl. Phys., vol. 84, pp. 4370374, Oct. 1998.