Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors

Microelectronics Reliability

Volumn 39, Issue 12, 1999, Pages 1801-1808

  Pavlidis, Dimitris ^a  

^a The Department of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005021409     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00188-2     Document Type: Review

References (18)

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