Metamorphic transistor technology for RF applications

Microwave Journal

Volumn 44, Issue 4, 2001, Pages 110-120

  Whelan, C S ^a   Marsh, P F ^a   Hoke, W E ^a   Lardizabal, S M ^a,b   Leoni III, R ^a,c   Hwang, K C ^a,d,e,f   Kazior, T E ^a  

^a RAYTHEON COMPANY   (United States)

^b UNIVERSITY OF SOUTH FLORIDA   (United States)

^c LEHIGH UNIVERSITY   (United States)

^d UNIVERSITY OF FLORIDA   (United States)

^e GENERAL ELECTRIC COMPANY   (United States)

^f LOCKHEED MARTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOCAL MULTIPOINT DISTRIBUTIONS SYSTEMS (LMDS);

BANDWIDTH; DATA TRANSFER; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; RADAR EQUIPMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSMISSION ELECTRON MICROSCOPY; WIRELESS TELECOMMUNICATION SYSTEMS;

MILLIMETER WAVE DEVICES;

EID: 0035306819     PISSN: 01926225     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

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