Millimeter-wave low noise metamorphic HEMT amplifiers and devices on GaAs substrates

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1999, Pages 221-223

  Marsh, P F ^a   Kang, S ^a   Wohlert, R ^a   McIntosh, P M ^a   Hoke, W E ^a   McTaggart, R A ^a   Lardizabal, S M ^a   Leoni III, R E ^a   Whelan, C S ^a   Lemonias, P J ^a   Kazior, T E ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

LOW NOISE AMPLIFIERS;

HIGH FREQUENCY AMPLIFIERS;

EID: 0033345316     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)