Comparison of channel indium content in low noise metamorphic HEMTs with InxGa1-xAs (0.3 (8) Whelan, C S a Lardizabal, S M a Buhles, P M a Hoke, W E a Marsh, P F a McTaggart, R A a McCarroll, C P a Kazior, T E a a RAYTHEON COMPANY (United States)

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 349-352

Author keywords

[No Author keywords available]

Indexed keywords

METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (MHEMT);

MILLIMETER WAVE DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033719466     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)

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5. 1-x (0.3
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