Electrical characteristics of poly-Si TFT's with smooth surface roughness at oxide/poly-Si interface

IEEE Transactions on Electron Devices

Volumn 44, Issue 11, 1997, Pages 2036-2038

  Min, Byung Hyuk ^a   Park, Cheol Min ^a   Koo Han, Min ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC NETWORK PARAMETERS; INTERFACES (MATERIALS); OXIDATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE ROUGHNESS;

POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS;

THIN FILM TRANSISTORS;

EID: 0031274319     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.641379     Document Type: Article

References (7)

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3. K. Takechi, H. Uchida, and S. Kaneko, "Mobility improvement mechanism in a-Si : H TFT's with smooth a-Si : H/SiNx interface," in Proc. Mat. Res. Soc. Symp., 1992, vol. 258, p. 955.
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5. A. C. Ipri, "Method of forming an improved gate dielectric for a MOSFET on an insulating substrate," U.S. Patent 4758529, Hopewell Township, NJ, July 1988.
6. M. C. Jun et al, "Polycrystalline silicon oxidation method improving surface roughness at the oxide/polycrystalline silicon interface," Appl. Phys. Lett., vol. 66, p. 2206, Apr. 1995.
7. C.-Y. Chang et al, "Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films," IEEE Electron Device Lett., vol. 17, pp. 100-102, Mar. 1996.