Fabrication of thin film transistors by chemical mechanical polished polycrystalline silicon films

IEEE Electron Device Letters

Volumn 17, Issue 3, 1996, Pages 100-102

  Chang, Chun Yen ^a,b   Lin, Hsiao Yi ^a,b   Lei, Tan Fu ^b   Cheng, Juing Yi ^b   Chen, Liang Po ^c   Dai, Bau Tong ^a,c  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; FILM PREPARATION; LOW TEMPERATURE OPERATIONS; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; VACUUM APPLICATIONS;

CHEMICAL MECHANICAL POLISHING; MAXIMUM FIELD EFFECT MOBILITY; ON OFF CURRENT RATIO; POLYCRYSTALLINE SILICON FILMS; THRESHOLD VOLTAGE; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

THIN FILM TRANSISTORS;

EID: 0030109917     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.485180     Document Type: Article

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