Dopant redistribution and formation of electrically active complexes in SiGe

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 217-223

  Kuznetsov, A Yu ^a   Christensen, J S ^a   Monakhov, E V ^a   Lindgren, A C ^a   Radamson, H H ^a   Nylandsted Larsen, A ^b   Svensson, B G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; CAPACITANCE; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; HETEROJUNCTIONS; PHOSPHORUS; POINT DEFECTS; RELAXATION PROCESSES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

DIVACANCY; SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035247777     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00142-6     Document Type: Article

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