Comparison of Strain Relaxation in Si/SiGe/Si Heterostructures after Annealing in Oxidizing and Inert Atmospheres

Physica Scripta T

Volumn 79, Issue , 1999, Pages 202-205

  Kuznetsov, A Yu ^a,d   Radamson, H H ^a   Svensson, B G ^a   Ni, W X ^b   Hansson, G V ^b   Nylandsted Larsen, A ^c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c AARHUS UNIVERSITY   (Denmark)

^d INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042792781     PISSN: 02811847     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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