On the temperature dependence of hysteresis effect in floating-body partially depleted SOI CMOS circuits

IEEE Journal of Solid-State Circuits

Volumn 36, Issue 2, 2001, Pages 290-298

  Puri, R ^a   Chuang, C T ^a   Ketchen, M B ^a   Pelella, M M ^a   Rosenfield, M G ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Circuit modeling; CMOS digital integrated circuits; Silicon on insulator (SOI) technology

Indexed keywords

DELAY CIRCUITS; HYSTERESIS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

PASS-TRANSISTOR-BASED CIRCUITS;

CMOS INTEGRATED CIRCUITS;

EID: 0035247166     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.902770     Document Type: Article

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