High dose Si- and Mg-implantation in GaN: Electrical and structural analysis

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 127-128, Issue , 1997, Pages 467-470

  Zolper, J C ^a   Crawford, M H ^a   Williams, J S ^b   Tan, H H ^b   Stall, R A ^c  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^c EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRON TRANSPORT PROPERTIES; ION IMPLANTATION; LUMINESCENCE; MAGNESIUM; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

CHANNELING; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031547717     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(96)00973-1     Document Type: Article

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