Morphology of luminescent GaN films grown by molecular beam epitaxy

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 355-357

  Trager Cowan, C ^a   O'Donnell, K P ^a   Hooper, S E ^b   Foxon, C T ^b  

^a UNIVERSITY OF STRATHCLYDE   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BANDPASS FILTERS; CATHODOLUMINESCENCE; EXCITONS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS; MORPHOLOGY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; ULTRAVIOLET RADIATION;

DEEP LEVEL LUMINESCENCE; GALLIUM NITRIDE; GREEN EMISSION BAND; HEXAGONAL CRYSTALLITES;

SEMICONDUCTING FILMS;

EID: 0029770861     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116714     Document Type: Article

References (10)

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