Luminescence properties of oxygen-containing silicon annealed at enhanced argon pressure

Physica Status Solidi (B) Basic Research

Volumn 211, Issue 1, 1999, Pages 233-238

  Misiuk, A ^a   Surma, B ^a   Rebohle, L ^b   Jun, J ^a   Antonova, I V ^c   Tyschenko, I ^c   Romano Rodriguez, A ^d   Lopez, M ^d  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^d UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033249292     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199901)211:1<233::AID-PSSB233>3.0.CO;2-B     Document Type: Article

References (10)

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