Pressure-induced formation of thermal donor centers in silicon after oxygen ion bombardment

Semiconductors

Volumn 33, Issue 10, 1999, Pages 1049-1053

  Antonova, I V ^a   Popov, V P ^a   Kilanov, D V ^a   Neustroev, E P ^b   Misuk, A ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b NORTH EASTERN FEDERAL UNIVERSITY   (Russian Federation)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033212229     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187862     Document Type: Article

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