Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 73, Issue 1, 2000, Pages 134-138

  Misiuk, A ^a   Barcz, A ^a   Ratajczak, J ^a   Lopez, M ^b   Romano Rodriguez, A ^b   Bak Misiuk, J ^c   Surma, H B ^a   Jun, J ^d   Antonova, I V ^e   Popov, V P ^e  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b UNIVERSITY OF BARCELONA   (Spain)

^c INSTITUTE OF PHYSICS   (Poland)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^e INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; ARGON; HYDROSTATIC PRESSURE; ION IMPLANTATION; OXYGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SILICA; STRESSES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BURIED SILICA LAYER; EXTERNAL STRESS; OXYGEN IMPLANTED SILICON;

SILICON WAFERS;

EID: 0033903858     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00450-X     Document Type: Article

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