Annealing behavior of crystalline Si implanted with high dose of protons

Physica Status Solidi (A) Applied Research

Volumn 165, Issue 2, 1998, Pages 361-365

  Zhang, Miao ^a   Wang, Lianwei ^a   Zhou, Zuyao ^a   Lin, Zixin ^a   Lin, Chenglu ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION IMPLANTATION; PROTONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

PROTON IMPLANTATION;

SILICON WAFERS;

EID: 0031999945     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-396x(199802)165:2<361::aid-pssa361>3.0.co;2-%23     Document Type: Article

References (9)

1. W. PRIMAK, J. Appl. Phys. 34, 3630 (1963).
2. J. WONG-LEUNG, J. S. WILLIAMS, and E. NYGREN, Nucl. Instrum. and Methods B106, 424 (1995).
3. J. WONG-LEUNG, E. NYGREN, and J. S. WILLIAMS, Appl. Phys. Lett. 67, 416 (1995).
4. B. MOHADJERI, J. S. WILLIAMS, and J. WONG-LEUNG, Appl. Phys. Lett. 66, 1889 (1995).
5. J. WONG-LEUNG, C. E. ASCHERON, M. PETRAVIC, R. G. ELLIMAN, and J. S. WILLIAMS, Appl. Phys. Lett. 66, 1231 (1995).
6. M. BRUEL, Electron. Lett. 31, 1201 (1995).
7. G. F. CEROFOLINI, L. MEDA, R. BALBONIL, F. CORNI, S. FRABBONI, G. OTTAVIANI, R. TONINI, M. ANDERLE, and R. CANTERI, Phys. Rev. B 46, 2061 (1992).
8. G. F. CEROFOLINI, R. BALBONI, D. BISERO, F. CORNI, S. FRABBONI, G. OTTAVIANI, R. TONINI, R. S. BRUSA, A. ZECCA, M. CESCHINI, G. GIEBEL, and L. PAVESI, phys. stat. sol. (a) 150, 539 (1995).
9. M. F. BEAUFORT, H. GAREM, and J. LEPINOUX, Phil. Mag. A69, 881 (1994).