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Volumn 69, Issue , 1999, Pages 345-350

Effect of external stress applied during annealing on hydrogen- and oxygen-implanted silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH FROM MELT; DISLOCATIONS (CRYSTALS); HYDROGEN; ION IMPLANTATION; OXYGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; THERMAL DIFFUSION IN SOLIDS; THERMAL STRESS; X RAY ANALYSIS;

EID: 0032642738     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.69-70.345     Document Type: Article
Times cited : (21)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.