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Volumn 69, Issue , 1999, Pages 345-350
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Effect of external stress applied during annealing on hydrogen- and oxygen-implanted silicon
a a b b c d d a e |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CRYSTAL GROWTH FROM MELT;
DISLOCATIONS (CRYSTALS);
HYDROGEN;
ION IMPLANTATION;
OXYGEN;
PHOTOLUMINESCENCE;
SECONDARY ION MASS SPECTROMETRY;
THERMAL DIFFUSION IN SOLIDS;
THERMAL STRESS;
X RAY ANALYSIS;
X-RAY DIFFUSE SCATTERING;
SILICON WAFERS;
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EID: 0032642738
PISSN: 10120394
EISSN: None
Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/ssp.69-70.345 Document Type: Article |
Times cited : (21)
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References (10)
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