Effect of pressure treatment on electrical properties of hydrogen-doped silicon

ASDAM 1998 Conference Proceedings: 2nd International Conference on Advanced Semiconductor Devices And Microsystems

Volumn 1998-October, Issue , 1998, Pages 47-50

  Surma, B ^a,b   Misiuk, A ^b   Jun, J ^b   Rozental, M ^b   Wnuk, A ^a   Ulyashin, A G ^c   Antonova, I V ^d   Popov, V P ^d   Job, R ^e  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b Institute of E:lectron Technology   (Poland)

^c BELARUSIAN NATIONAL TECHNICAL UNIVERSITY   (Belarus)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^e UNIVERSITY OF HAGEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; HYDROGEN; MICROSYSTEMS; SILICON;

ARGON PRESSURE; EFFECT OF PRESSURE; ELECTRON CONCENTRATION; FTIR MEASUREMENTS; GENERATION RATE; HYDROGEN PLASMAS; SILICON SAMPLES; THERMAL DONOR;

SEMICONDUCTOR DEVICES;

EID: 0343537748     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASDAM.1998.730163     Document Type: Conference Paper

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