Recent developments in scanning tunneling spectroscopy of semiconductor surfaces

Applied Physics A: Materials Science and Processing

Volumn 72, Issue 8, 2001, Pages

  Feenstra, R M ^a   Ramachandran, V ^a,b   Chen, H ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION; ELECTRIC CURRENTS; ELECTRONIC STRUCTURE; SEMICONDUCTING SILICON; SURFACES;

BAND GAP; ELECTRONIC EFFECTS; MOTT-HUBBARD GAP; TUNNEL CURRENT;

SCANNING TUNNELING MICROSCOPY;

EID: 0034827784     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390100718     Document Type: Article

References (48)

1. R.S. Becker, J.A. Golovchenko, D.R. Hamann, B.S. Swartzentruber: Phys. Rev. Lett. 55, 2032 (1985)
2. R.M. Feenstra, W.A. Thompson, A.P. Fein: Phys. Rev. Lett. 56, 608 (1986)
3. R.J. Hamers, R.M. Tromp, J.E. Demuth: Phys. Rev. Lett. 56, 1972 (1986)
4. J.A. Stroscio, R.M. Feenstra, A.P. Fein: Phys. Rev. Lett. 57, 2579 (1986)
5. R.M. Feenstra: Surf. Sci. 299/300, 965 (1994)
6. R.M. Feenstra, J.A. Stroscio: J. Vac. Sci. Technol. B 5, 923 (1987)
7. R.M. Feenstra: Phys. Rev. B 50, 4561 (1994)
8. R.M. Feenstra: Phys. Rev. B 60, 4478 (1999)
9. V. Ramachandran, R.M. Feenstra: Phys. Rev. Lett. 82, 1000 (1999)
10. R.M. Feenstra: Physica B 273-274, 796 (1999)
11. R.I.G. Uhrberg, G.V. Hansson, J.M. Nicholls, S.A. Flodstrom: Phys. Rev. Lett. 48, 1032 (1982)
12. P. Perfetti, J.M. Nicholls, B. Reihl: Phys. Rev. B 36, 6160 (1987)
13. A. Cricenti, S. Selci, K.O. Magnusson, B. Reihl: Phys. Rev. B 41, 12 908 (1990)
14. M. Rohlfing, S.G. Louie: Phys. Rev. Lett. 83, 856 (1999)
15. L.I. Johansson, F. Owman, P. Mårtensson: Surf. Sci. 360, L478 (1996)
16. J.-M. Themlin, I. Forbeaux, V. Langlais, H. Belkhir, J.-M. Debever: Europhys. Lett. 39, 61 (1997)
17. J.E. Northrup, J. Neugebauer: Phys. Rev. B 57, R4230 (1998)
18. K.C. Pandey: Phys. Rev. Lett. 47, 1913 (1981);
19. Phys. Rev. Lett. 51, 17 (1985)
20. R. Del Sole, A. Selloni: Phys. Rev. B 30, 883 (1984) Eq. (13); Note that there is a typographical error in this equation; the cosine term should be squared
21. J.E. Northrup, M.S. Hybertsen, S.G. Louie: Phys. Rev. Lett. 66, 500 (1991);
22. Proceedings of the 20th International Conference on the Physics of Semiconductors, ed. by J.D. Joannopoulos, E.M. Anastassakis (World Scientific, Teaneck 1990) p. 119
23. G. Chiarotti, S. Nannarone, R. Pastore, P. Chiaradia: Phys. Rev. B 4, 3398 (1971)
24. R.M. Feenstra, J.A. Stroscio, A.P. Fein: Surf. Sci. 181, 295 (1987)
25. Band-edge locations in [4] are given as -0.3 eV and 0.2eV. A careful re-examination of the data reveals more precise values as being - 0.31 ± 0.02 eV and 0.20 ± 0.02 eV respectively. The difference between these values is 0.51 ± 0.03 eV, where the error estimate in the result is computed by combining the component errors in quadrature
26. R.M. Feenstra: Phys. Rev. B 44, 13 791 (1991)
27. F. Owman, P. Mårtensson: Surf. Sci. 330, L639 (1995)
28. L. Li, I.S.T. Tsong: Surf. Sci. 351, 141 (1996)
29. L. Li, T. Sakurai, I.S.T. Tsong: J. Appl. Phys. 80, 2524 (1996)
30. J.E. Northrup, J. Neugebauer: Phys. Rev. B 52, R17 001 (1995)
31. M. Sabisch, P. Krüger, J. Pollmann: Phys. Rev. B 55, 10 561 (1997)
32. S. Scandolo, F. Ancilatto, G.L. Chiarotti, G. Santoro, S. Serra, E. Tosatti: Surf. Sci. 402-404, 808 (1998)
33. T. Tsukamoto, M. Hirai, M. Kusaka, M. Iwami, T. Ozawa, T. Nagamura, T. Nakata: Surf. Sci. 371, 316 (1997)
34. P. Badziag: Surf. Sci. 402-404, 822 (1998)
35. F. Owman, P. Mårtensson: personal communication
36. F. Flores, N. Garcia: Phys. Rev. B 30, 2289 (1984)
37. For a review, see R.M. Feenstra: Semicond. Sci. Technol. 9, 2157 (1994)
38. For a review, see E.T. Yu: Mater. Sci. Eng. R R17, 147(1996)
39. O. Albrektsen, D.J. Arent, H.P. Meier, H.W.M. Salemink: Appl. Phys. Lett. 57, 31 (1990)
40. S. Gwo, K.-J. Chao, C.K. Shih: Appl. Phys. Lett. 64, 493 (1994)
41. H. Chen, R.M. Feenstra, P.G. Piva, R.D. Goldberg, I.V. Mitchell, G.C. Aers, P.J. Poole, S. Charbonneau: Appl. Phys. Lett. 75, 79 (1999)
42. S. Charbonneau, P.J. Poole, P.G. Piva, G.C. Aers, E.S. Koteles, M. Fallahi, J.-J. He, J.P. McCaffrey, M. Buchanan, M. Dion, R.D. Goldberg, I.V. Mitchell: J. Appl. Phys. 78, 3697 (1995)
43. T. Pinnington, A. Sanderson, T. Tiedje, T.P. Pearsall, E. Kasper, H. Presting: Thin Solid Films 222, 259 (1992)
44. H. Chen, R.M. Feenstra, R.S. Goldman, C. Silfvenius, G. Landgren: Appl. Phys. Lett. 72, 1727 (1998)
45. B. Grandidier, R.M. Feenstra, C. Silfvenius, G. Landgren: J. Vac. Sci. Technol. A 17, 2251 (1999)
46. R.M. Feenstra, J.A. Stroscio, A.P. Fein: Surf. Sci. 181, 295 (1987)
47. M.V Fischetti: IEEE Trans. Electron Devices 38, 634 (1991)
48. C.B. Duke: Tunneling in Solids (Academic, New York 1969) Eq. (7.8b) and discussion following