Enhanced group-V intermixing in InGaAs/InP quantum wells studied by cross-sectional scanning tunneling microscopy

Applied Physics Letters

Volumn 75, Issue 1, 1999, Pages 79-81

  Chen, Huajie ^a   Feenstra, R M ^a   Piva, P G ^b   Goldberg, R D ^b   Mitchell, I V ^b   Aers, G C ^c   Poole, P J ^c   Charbonneau, S ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); ION IMPLANTATION; PHOSPHORUS; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPY; QUANTUM WELL INTERDIFFUSIONS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0032608137     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124282     Document Type: Article

References (14)

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11. -3), we also implanted through the MQW region of the present sample with 4.7 meV P ions and found very little strain development from XRD/STM, similar to our first STM study.
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