Compositional variations in strain-compensated InGaAsP/InAsP superlattices studied by scanning tunneling microscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2251-2256

  Grandidier, B ^a   Feenstra, R M ^a   Silfvenius, C ^b   Landgren, G ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; COMPOSITIONAL VARIATION; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; GALLIUM ATOMS; INGAASP; INP; METAL-ORGANIC VAPOR PHASE EPITAXY; SCANNING TUNNELING SPECTROSCOPY; STM IMAGES; STRAIN-COMPENSATED;

ARSENIC; GALLIUM; SCANNING; SPECTROSCOPY; SUPERLATTICES; SURFACE SEGREGATION;

SCANNING TUNNELING MICROSCOPY;

EID: 0003601178     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581756     Document Type: Conference Paper

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