Fabrication of high-quality poly-Si thin films combined with in situ real-time spectroscopic ellipsometry

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 883-886

  Akasaka, Tetsuya ^a   Shimizu, Isamu ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CRYSTALLIZATION; DEGRADATION; ELLIPSOMETRY; FABRICATION; HYDROGEN; NUCLEATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SPECTROSCOPY; SURFACE ROUGHNESS;

ATOMIC HYDROGEN INDUCED CRYSTALLIZATION; IN SITU REAL TIME SPECTROSCOPIC ELLIPSOMETRY; LAYER BY LAYER TECHNIQUE;

THIN FILMS;

EID: 4244186064     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00075-0     Document Type: Article

References (7)

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