Determination of the mobility gap of microcrystalline silicon and of the band discontinuities at the amorphous/microcrystalline silicon interface using in situ Kelvin probe technique

Applied Physics Letters

Volumn 74, Issue 21, 1999, Pages 3218-3220

  Hamma, S ^a   Roca I Cabarrocas, P ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000433107     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124110     Document Type: Article

References (11)

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