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Volumn 4283, Issue , 2001, Pages 58-66

Novel RiS-type InGaN MQW laser diodes on FIELO GaN substrates

Author keywords

GaN; GaN substrate; Laser diode; Ridge geometry; Selective growth; Transverse mode

Indexed keywords

GALLIUM NITRIDE; LASER MODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THERMAL EFFECTS;

EID: 0034784245     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.432599     Document Type: Conference Paper
Times cited : (2)

References (14)
  • 9
    • 0032294008 scopus 로고    scopus 로고
    • High quality and thick GaN substrate epitaxially grown by VPE lateral overgrowth
    • (1998) LEOS'98 conf. , vol.98 CH36243 , pp. 362
    • Usui, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.