InGaN MQW laser diodes grown on an n-GaN substrate with a backside n-contact

IEICE Transactions on Electronics

Volumn E83-C, Issue 4, 2000, Pages 552-559

  Kuramoto, Masaru ^a   Atsushi Yamaguchi, A ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Backside n contact; Ingan multi quantum well; Low dislocation density; N gan substrate; Semiconductor laser diodes

Indexed keywords

FACET INITIATED EPITAXIAL LATERAL OVERGROWTH; GALLIUM NITRIDE SUBSTRATE; LOW DISLOCATION DENSITY; THREADING DISLOCATIONS; THRESHOLD CURRENT;

CURRENT DENSITY; EPITAXIAL GROWTH; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES; THRESHOLD VOLTAGE;

QUANTUM WELL LASERS;

EID: 0033689857     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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