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Volumn 1, Issue , 1998, Pages 362-363
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High quality and thick GaN substrate epitaxially grown by VPE lateral overgrowth
a
a
NEC CORPORATION
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CARRIER MOBILITY;
CRYSTAL ORIENTATION;
DISLOCATIONS (CRYSTALS);
MASKS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
SILICA;
TRANSMISSION ELECTRON MICROSCOPY;
VAPOR PHASE EPITAXY;
EPITAXIAL LATERAL OVERGROWTH (ELO);
GALLIUM NITRIDE;
HYDRIDE VAPOR PHASE EPITAXY (HVPE);
SEMICONDUCTING FILMS;
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EID: 0032294008
PISSN: 10928081
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (1)
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References (6)
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