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Volumn 10, Issue 27, 1998, Pages

29Si hyperfine structure of the Pb1 interface defect in thermal (100)Si/SiO2

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EID: 0343439129     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/27/004     Document Type: Article
Times cited : (4)

References (24)
  • 1
    • 30844431996 scopus 로고
    • and references therein
    • 2 defect physics, see the 13 papers in 1989 Semicond. Sci. Technol. 4 961, and references therein
    • (1989) Semicond. Sci. Technol. , vol.4 , pp. 961
  • 12
    • 0002439260 scopus 로고
    • ed C R Helms and B E Deal (New York: Plenum)
    • 2 interface ed C R Helms and B E Deal (New York: Plenum) p 271
    • (1988) 2 Interface , pp. 271
    • Edwards, A.H.1
  • 20
  • 21
    • 36149016389 scopus 로고
    • Watkins G D and Corbett J W 1961 Phys. Rev. 121 1001 Walkins G D and Corbett J W 1964 Phys. Rev. 134A 1359
    • (1964) Phys. Rev. , vol.134 A , pp. 1359
    • Walkins, G.D.1    Corbett, J.W.2
  • 23
    • 11544321991 scopus 로고    scopus 로고
    • Stesmans A 1996 Appl. Phys. Lett. 68 2076 Stesmans A 1996 Appl. Phys. Lett. 68 2723
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2076
    • Stesmans, A.1
  • 24
    • 0542363921 scopus 로고    scopus 로고
    • Stesmans A 1996 Appl. Phys. Lett. 68 2076 Stesmans A 1996 Appl. Phys. Lett. 68 2723
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2723
    • Stesmans, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.