Electron paramagnetic resonance study of defects in oxidized and nitrided porous Si and Si(1-x)Ge(x)

Colloids and Surfaces A: Physicochemical and Engineering Aspects

Volumn 115, Issue , 1996, Pages 277-289

  Von Bardeleben, H J ^a   Schoisswohl, M ^a   Cantin, J L ^a  

^a SORBONNE UNIVERSITÉ   (France)

Author keywords

defects; electron paramagnetic resonance

Indexed keywords

CRYSTAL DEFECTS; DIELECTRIC PROPERTIES; EPITAXIAL GROWTH; INTERFACES (MATERIALS); MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; NITRIDING; OXIDATION; PARAMAGNETIC RESONANCE; SEMICONDUCTING SILICON COMPOUNDS; SURFACE PROPERTIES; SYNTHESIS (CHEMICAL);

INTERFACIAL DEFECTS; INTERNAL SURFACE AREA; ISOTOPICALLY ENRICHED SAMPLES; POROUS SILICON GERMANIDE; SUPERHYPERFINE INTERACTION;

POROUS SILICON;

SILICON;

CONFERENCE PAPER; ELECTRON SPIN RESONANCE; PRIORITY JOURNAL; SURFACE PROPERTY;

EID: 0342936248     PISSN: 09277757     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-7757(96)03604-7     Document Type: Conference Paper

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