Study on high-speed deep etching of GaN film by UV laser ablation

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 725-729

  Zhang, J ^a   Sugioka, K ^a   Wada, S ^a   Tashiro, H ^a   Midorikawa, K ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Etching; GaN; Laser ablation; Microfabrication; UV; VUV

Indexed keywords

CRYSTAL STRUCTURE; ETCHING; LASER ABLATION; LASER BEAMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; ULTRAVIOLET RADIATION;

GALLIUM NITRIDE; HIGH SPEED DEEP ETCHING; SCANNING PROBE MICROSCOPY;

SEMICONDUCTING FILMS;

EID: 0032092030     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00272-3     Document Type: Article

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