Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 362-367

  Kwon, Ho Ki ^a   Eiting, C J ^a   Lambert, D J H ^a   Shelton, B S ^a   Wong, M M ^a   Zhu, T G ^a   Dupuis, R D ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON GAS; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; RADIATIVE RECOMBINATION; TWO-DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 0034514012     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00714-4     Document Type: Article

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